BSP296L6327 Infineon Technologies, BSP296L6327 Datasheet - Page 3

• Manufacturer Part Number: BSP296L6327
• Description: MOSFET, N, LOGIC, REEL 1K
• Manufacturer: Infineon Technologies

Specifications of BSP296L6327

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 1.4V
• Rohs Compliant: Yes

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
g
C
C
C
t
t
t
t
I
V
t
Q
Symbol
j
Q
Q
Q
V
d(on)
r
d(off)
f
S
SM
rr
= 25 °C, unless otherwise specified
fs
iss
oss
rss
SD
rr
(plateau) V
gs
gd
g
Rev. 1.3
V
I
V
f=1MHz
V
I
T
V
V
di
V
V
V
D
D
Page 3
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=0.88A
=1.1A, R
=25°C
=50V, I
/dt=100A/µs
=0, V
=50V, V
=0, I
=80V, I
=80V, I
=0 to 10V
=80V, I
2*I
Conditions
D
F
*R
DS
F =
= I
G
D
D
D
DS(on)max
GS
=6
=25V,
l
S
S
=1.1A
=1.1A,
= 1.1 A
,
=10V,
,
min.
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
37.4
21.4
0.82
44.3
71.9
typ.
291
13.8
1.2
5.2
7.9
0.7
2.7
53
29
5
-
-
2005-11-23
max.
11.8
56.1
32.1
55.4
89.8
364
17.2
7.8
1.1
4.4
1.2
66
36
0.9
7.5
BSP296
-
-
Unit
S
pF
ns
A
V
ns
nC
nC
V