BSP171PL6327 Infineon Technologies, BSP171PL6327 Datasheet

MOSFET, P, REEL 1K

BSP171PL6327

Manufacturer Part Number
BSP171PL6327
Description
MOSFET, P, REEL 1K
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP171PL6327

Transistor Polarity
P Channel
Continuous Drain Current Id
1.45A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
450mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev 2.3
SIPMOS
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSP 171 P
®
Small-Signal-Transistor
Package
PG-SOT-223
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
V
di /dt =-200 A/µs,
T
T
D
D
A
A
A
j,max
A
DS
=-1.9 A, R
=-1.9 A,
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=-48 V,
=150 °C
1)
1)
1)
GS
Product Summary
V
R
I
D
=25
DS
DS(on),max
Marking
171P
steady state
-55 ... 150
55/150/56
Value
-1.9
-1.5
-7.6
±20
1.8
PG-SOT-223
70
-6
-1.9
-60
0.3
BSP171P
2005-11-29
Unit
A
mJ
kV/µs
V
W
°C
V
A

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BSP171PL6327 Summary of contents

Page 1

SIPMOS ® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant Type Package BSP 171 P PG-SOT-223 Maximum ratings =25 °C, unless otherwise specified ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 1) Device ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 2) Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Output charge ...

Page 4

Power dissipation P =f(T ) tot A 2 1 [° Safe operating area =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter -4 Typ. transfer characteristics I ...

Page 6

Drain-source on-state resistance R =f =-1 =-10 V DS(on 500 400 98 % 300 200 typ. 100 0 -60 - [° Typ. capacitances C =f ...

Page 7

Avalanche characteristics parameter: T j(start 0 [µ Drain-source breakdown voltage V =f =-1 mA BR(DSS ...

Page 8

Package Outline SOT-223: Outline Footprint Dimensions in mm Rev 2.3 Packaging Tape page 8 BSP171P 2005-11-29 ...

Page 9

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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