BLF645 NXP Semiconductors, BLF645 Datasheet - Page 2

• Manufacturer Part Number: BLF645
• Description: LDMOS,RF,100W,HF-1300MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF645

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 32A
• Operating Frequency Range: 108MHz To 225MHz
• Rf Transistor Case: SOT-540A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF645_1
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
4
5
Type number
BLF645
Symbol
V
V
I
T
T
Symbol Parameter
R
D
stg
j
DS
GS
th(j-c)
Communication transmitter applications in the HF to 1400 MHz frequency range
Industrial applications in the HF to 1400 MHz frequency range
Connected to flange.
R
th(j-c)
is measured under RF conditions.
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain 1
drain 2
gate 1
gate2
source
Description
Package
Name
-
Rev. 01 — 27 January 2010
Description
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
Conditions
[1]
Conditions
T
Simplified outline
case
Broadband power LDMOS transistor
= 80 °C; P
1
3
2
4
-
-
Min
-
−0.5
−65
L
= 100 W
5
Graphic symbol
© NXP B.V. 2010. All rights reserved.
Max
65
+11
32
+150
200
BLF645
3
4
[1]
Typ
0.67 K/W
Version
SOT540A
1
2
sym117
A
Unit
V
V
°C
°C
2 of 13
5
Unit