BFS17P Infineon Technologies, BFS17P Datasheet - Page 7

• Manufacturer Part Number: BFS17P
• Description: RF TRANSISTOR, NPN, SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFS17P

• Transistor Polarity: N Channel
• Collector Emitter Voltage V(br)ceo: 15V
• Gain Bandwidth Ft Typ: 2.5GHz
• Power Dissipation Pd: 280mW
• Dc Collector Current: 25mA
• Operating Temperature Range: -65°C To +150°C
• Rf: RoHS Compliant
• Dc Current Gain Hfe: 70
• Rohs Compliant: Yes
• Packages: SOT23
• Vceo (max): 15.0 V
• Ic(max): 25.0 mA
• Nfmin (typ): 3.5 dB
• Gmax (typ): -
• Oip3: 21.5 dBm

BFS17P
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
2005-11-17
7