BFS17P Infineon Technologies, BFS17P Datasheet - Page 3

• Manufacturer Part Number: BFS17P
• Description: RF TRANSISTOR, NPN, SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFS17P

• Transistor Polarity: N Channel
• Collector Emitter Voltage V(br)ceo: 15V
• Gain Bandwidth Ft Typ: 2.5GHz
• Power Dissipation Pd: 280mW
• Dc Collector Current: 25mA
• Operating Temperature Range: -65°C To +150°C
• Rf: RoHS Compliant
• Dc Current Gain Hfe: 70
• Rohs Compliant: Yes
• Packages: SOT23
• Vceo (max): 15.0 V
• Ic(max): 25.0 mA
• Nfmin (typ): 3.5 dB
• Gmax (typ): -
• Oip3: 21.5 dBm

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 800 MHz
Transducer gain
I
f = 500 MHz
Third order intercept point at output
V
Z
1dB Compression point
I
f = 800 MHz
C
C
C
C
C
S
CB
CE
EB
CE
= 2 mA, V
= 25 mA, V
= 2 mA, V
= 20 mA, V
= 20 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, I
Sopt
, Z
C
CE
CE
L
CE
CE
CE
= 20 mA, f = 800 MHz,
= Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, Z
Lopt
BE
BE
S
S
S
CB
= 50 Ω,
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
L
L
A
= 50Ω,
= 50Ω,
= 25°C, unless otherwise specified
3
Symbol
f
C
C
C
F
|S
IP
P
T
-1dB
cb
ce
eb
21e
3
|
2
min.
1.3
1
-
-
-
-
-
-
-
Values
21.5
0.55
0.27
typ.
1.4
2.5
0.9
3.5
13
10
max.
1.45
0.8
5
2005-11-17
-
-
-
-
-
-
BFS17P
Unit
GHz
pF
dB
dB
dBm
-