SI4838DY-T1-E3 Vishay, SI4838DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4838DY-T1-E3
• Description: N CHANNEL MOSFET, 12V, 25A, SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4838DY-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 4.5 V
• Gate Charge Qg: 60 nC
• Forward Transconductance Gfs (max / Min): 80 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4838DY-T1-E3TR

Si4838DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71359.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.01
0.01
0.4
0.2
0.0
0.1
0.1
- 50
2
1
2
1
10
10
- 4
- 4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
- 25
0.2
0.1
Single Pulse
0
Threshold Voltage
T
J
10
25
- Temperature (°C)
- 3
10
50
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
I
D
Normalized Thermal Transient Impedance, Junction-to-Foot
75
= 250 µA
10
100
- 2
125
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
150
- 2
10
- 1
10
1
60
50
40
30
20
10
0
- 1
10
- 2
10
- 1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
- T
1
t
1
1
A
Time (s)
= P
S09-0221-Rev. D, 09-Feb-09
t
2
DM
Document Number: 71359
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 67 °C/W
100
600
10
600