SI4838DY-T1-E3 Vishay, SI4838DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4838DY-T1-E3
• Description: N CHANNEL MOSFET, 12V, 25A, SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4838DY-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.003 Ohm @ 4.5 V
• Gate Charge Qg: 60 nC
• Forward Transconductance Gfs (max / Min): 80 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4838DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71359
S09-0221-Rev. D, 09-Feb-09
0.005
0.004
0.003
0.002
0.001
0.000
60
10
1
5
4
3
2
1
0
0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
10
0.2
On-Resistance vs. Drain Current
= 25 A
T
= 6 V
J
9
= 150 °C
V
SD
Q
g
- Source-to-Drain Voltage (V)
0.4
20
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
18
0.6
30
27
T
J
0.8
40
= 25 °C
V
V
GS
GS
= 2.5 V
= 4.5 V
36
50
1.0
1.2
60
45
0.015
0.012
0.009
0.006
0.003
0.000
7500
6000
4500
3000
1500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
- 25
V
I
D
GS
= 25 A
2
= 4.5 V
V
V
DS
0
GS
T
2
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
4
25
Capacitance
C
C
iss
oss
50
4
6
Vishay Siliconix
75
I
D
Si4838DY
= 25 A
8
www.vishay.com
100
6
10
125
150
12
8
3