SEMIX 653GD176HDC SEMIKRON, SEMIX 653GD176HDC Datasheet - Page 2

• Manufacturer Part Number: SEMIX 653GD176HDC
• Description: IGBT MODULE, 1.7KV, 620A, SEMIX 33C
• Manufacturer: SEMIKRON

Specifications of SEMIX 653GD176HDC

• Transistor Polarity: N Channel
• Dc Collector Current: 660A
• Collector Emitter Voltage Vces: 2.45V
• Collector Emitter Voltage V(br)ceo: 1.7kV
• Continuous Collector Current Ic: 650A
• Thermal Resistance: 0.048°C/W
• Rohs Compliant: Yes
• Collector Emitter Saturation Voltage Vce(sat): 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SEMiX653GD176HDc
Trench IGBT Modules
SEMiX653GD176HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
2
SEMiX
coefficient
CE(sat)
with positive temperature
®
33c
GD
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
Temperatur Sensor
R
B
F
RRM
CE
F
F0
rr
100/125
th(j-c)
CC'+EE'
th(c-s)
100
rr
s
t
= V
EC
Rev. 1 – 24.06.2010
I
V
chip
I
di/dt
V
V
res., terminal-chip
Conditions
per diode
per module
to heat sink (M5)
T
R
T[K];
F
F
GE
GE
CC
c
(T)
= 450 A
= 450 A
=100°C (R
=R
off
= 0 V
= -15 V
= 1200 V
= 4200 A/µs
100
exp[B
25
=5 kΩ)
100/125
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
(1/T-1/T
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 125 °C
100
)];
min.
0.9
0.7
1.3
1.8
2.5
3
493 ± 5%
0.014
3550
±2%
typ.
380
130
1.7
1.7
1.1
0.9
1.3
1.8
0.7
73
20
1
© by SEMIKRON
max.
1.90
0.11
900
1.9
1.3
1.1
1.3
1.8
5
5
Unit
K/W
K/W
mΩ
mΩ
mΩ
mΩ
Nm
Nm
Nm
µC
mJ
nH
Ω
V
V
V
V
A
g
K