2MBI100U4A-120-50 FUJI ELECTRIC, 2MBI100U4A-120-50 Datasheet - Page 5

• Manufacturer Part Number: 2MBI100U4A-120-50
• Description: DUAL IGBT MODULE 100A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI100U4A-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 150A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 540W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5. Thermal resistance characteristics
Thermal resistance(1device)
Contact Thermal resistance
(1 device) (*4)
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Logo of production
7. Applicable category
8. Storage and transportation notes
9. Definitions of switching time
10. Packing and Labeling
6. Indication on module
This specification is applied to IGBT-Module named 2MBI100U4A-120.
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
•
•
•
•
•
•
The module should be stored at a standard temperature of 5 to 35
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
Lot.No.
Items
R
G
V
GE
V
CE
Rth(j-c)
Rth(c-f)
Ic
Symbols
L
2MBI100U4A-120
100A 1200V
Vcc
IGBT
FWD
with Thermal Compound
0V
0V
0A
V
V
Ic
GE
CE
Conditions
10%
90%
t
o n
t
r
t
t
r ( i )
r r
Place of manufacturing (code)
MS5F6061
10%
I
r r
o
C and humidity of 45 to 75% .
V
Ic
min.
CE
-
-
-
90%
Characteristics
t
o f f
0.05
typ.
-
-
90%
t
f
10%
0V
max.
0.23
0.40
-
H04-004-03a
5
13
Units
o
C/W