2MBI100U4A-120-50 FUJI ELECTRIC, 2MBI100U4A-120-50 Datasheet
2MBI100U4A-120-50
Specifications of 2MBI100U4A-120-50
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2MBI100U4A-120-50 Summary of contents
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... SPECIFICATION Device Name : Type Name : Spec. No. : S.Miyashita Mar. 09 ’05 Y.Seki T.Miyasaka Mar. 09 ’05 K.Yamada IGBT MODULE 2MBI100U4A-120 MS5F 6061 MS5F6061 1 13 H04-004-07b ...
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Classi- Date Ind. fication Enactment Mar.-09 -’ Applied Content Drawn date Issued date MS5F6061 Checked Checked Approved T.Miyasaka K.Yamada Y.Seki 2 13 H04-004-06b ...
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... Outline Drawing ( Unit : Equivalent circuit 2MBI100U4A-120 MS5F6061 3 13 H04-004-03a ...
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Absolute Maximum Ratings ( at Tc= 25 Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Screw Mounting (*2) Terminals (*2) Torque (*1) All terminals should ...
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... Indication on module Logo of production 2MBI100U4A-120 100A 1200V Lot.No. 7. Applicable category This specification is applied to IGBT-Module named 2MBI100U4A-120. 8. Storage and transportation notes • The module should be stored at a standard temperature Store modules in a place with few temperature changes in order to avoid condensation on the • ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle ...
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Collector current vs. Collector-Emitter voltage (typ.) o Tj= chip 250 VGE=20V 15V 12V 200 150 100 Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip ...
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=5.6Ω, Tj=25 10000 1000 toff ton 100 100 150 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=100A, VGE=±15V, Tj=25 10000 ton 1000 ...
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Forward current vs. Forward on voltage (typ.) chip 250 200 o Tj=25 C Tj=125 150 100 Forward on voltage : Transient thermal resistance (max.) 1.00 0.10 0.01 0.001 0.010 0.100 Pulse ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...
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... The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本 ...