FP10R12W1T4 Infineon Technologies, FP10R12W1T4 Datasheet - Page 9

• Manufacturer Part Number: FP10R12W1T4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP10R12W1T4

• Transistor Polarity: N Channel
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 105W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Channel Type: N
• Configuration: Array 7
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Packages: AG-EASY1B-1
• Ic (max): 10.0 A
• Vce(sat) (typ): 1.85 V
• Technology: IGBT4
• Housing: EasyPIM™ 1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
1,0
0,8
0,6
0,4
0,2
0,0
0,1
10
1
0,001
0
2
4
0,01
6
τ
8
0,1
10 12 14 16 18 20
FP10R12W1T4
1
10
9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
20
18
16
14
12
10
8
6
4
2
0
0,0
0 40 80 120 160 200 240 280 320 360 400 440 480
0,2
0,4
0,6
Vorläufige Daten
preliminary data
0,8
1,0
1,2
1,4