FP10R12W1T4 Infineon Technologies, FP10R12W1T4 Datasheet - Page 8

• Manufacturer Part Number: FP10R12W1T4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP10R12W1T4

• Transistor Polarity: N Channel
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 105W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Channel Type: N
• Configuration: Array 7
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Packages: AG-EASY1B-1
• Ic (max): 10.0 A
• Vce(sat) (typ): 1.85 V
• Technology: IGBT4
• Housing: EasyPIM™ 1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
6,0
5,5
5,0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
22
20
18
16
14
12
10
8
6
4
2
0
0
0
50 100 150 200 250 300 350 400 450 500
200
400
600
800
FP10R12W1T4
1000 1200 1400
8
0,1
10
20
18
16
14
12
10
1
0,001
8
6
4
2
0
0,0
0,5
0,01
τ
1,0
0,1
Vorläufige Daten
preliminary data
1,5
1
2,0
2,5
10