FF900R12IE4 Infineon Technologies, FF900R12IE4 Datasheet - Page 8

• Manufacturer Part Number: FF900R12IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF900R12IE4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 5.1kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.75V
• Rohs Compliant: Yes
• Ic (max): 900.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FF900R12IE4
8
Vorläufige Daten
preliminary data