FF900R12IE4 Infineon Technologies, FF900R12IE4 Datasheet - Page 7

• Manufacturer Part Number: FF900R12IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FF900R12IE4

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 5.1kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.75V
• Rohs Compliant: Yes
• Ic (max): 900.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: dual
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
:_^p * Q+nS
:_^p * Q+nS
4W-, *
4W-, *
1
1
‚JYi' * Q S
‚JYi' * Q S
:_^p * Q+nS
:_^p * Q+nS
4W-, *
4W-, *
1
1
‚JYi' * Q S
‚JYi' * Q S
3
3
3
3
2
2
2
2
120
110
100
100
0,1
2 $
2 $
2 $
2 $
90
80
70
60
50
40
30
20
10
10
0
1
0,001
0
! ]E "'( * P
! ]E "'( * P
! ]E "'( * P
! ]E "'( * P
2 2 2 2
9#
9#
9#
9#
200 400 600 800 1000 1200 1400 1600
%
%
%
%
:_^pE 1<= *
:_^pE 1<= * O T
‚JYi' %
0,01
3
3
3
3
9
9
9
9
"
"
"
"
2
2
OT
2
2
\wD&69y
\w y
+n w y
%
%
%
%
0,1
Q
Q
Q
Q
Q
Q
Q
Q
w y
EO
E
9
9
9
9
S
S
S
S
2S
2S
2S
2S
FF900R12IE4
E
2
2
EU
2
2
!
1
!
!OE
E O
E
EP
10
7
:_^p * Q4WS
:_^p * Q4WS
:_^p * Q4WS
:_^p * Q4WS
+n *
+n *
+n *
+n *
G1
G1
G1
G1
G1
G1
G1
G1
4 * Q1S
4 * Q1S
4 * Q1S
4 * Q1S
3
3
100000
3
3
10000
2
2
2
2
1000
120
110
100
100
2 $
2 $
2 $
2 $
90
80
70
60
50
40
30
20
10
1
1
1
1
0
0,0
0
E "'( * P
E "'( * P
E "'( * P
E "'( * P
1,0
20
%
%
%
%
:_^pE 1<= *
:_^pE 1<= * O T
4Jƒ>
6
6
6
6
2
2
2
2
2,0
40
9
9
9
9
"
"
"
"
3,0
60
2
2
OT
2
2
Q
Q
Q
Q
1' wT y
4W w]y
4,0
Q
Q
Q
Q
80
Q
Q
Q
Q
Q
Q
Q
Q
Vorläufige Daten
preliminary data
2S
2S
2S
2S
100 120 140 160
5,0
S
S
S
S
2S
2S
2S
2S
S
S
S
S
6,0
7,0
8,0