DF650R17IE4 Infineon Technologies, DF650R17IE4 Datasheet - Page 8

• Manufacturer Part Number: DF650R17IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of DF650R17IE4

• Module Configuration: Chopper
• Transistor Polarity: N Channel
• Dc Collector Current: 650A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 4.15kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 2V
• Rohs Compliant: Yes
• Ic (max): 650.0 A
• Vce(sat) (typ): 2.0 V
• Configuration: chopper
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
DF650R17IE4
8
Vorläufige Daten
preliminary data