DF650R17IE4 Infineon Technologies, DF650R17IE4 Datasheet - Page 5

• Manufacturer Part Number: DF650R17IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of DF650R17IE4

• Module Configuration: Chopper
• Transistor Polarity: N Channel
• Dc Collector Current: 650A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 4.15kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 2V
• Rohs Compliant: Yes
• Ic (max): 650.0 A
• Vce(sat) (typ): 2.0 V
• Configuration: chopper
• Technology: IGBT4
• Housing: PrimePACK™ 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
2
2
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1300
1200
1100
1000
1300
1200
1100
1000
#
#
#
#
900
800
700
600
500
400
300
200
100
900
800
700
600
500
400
300
200
100
0
0
0,0
#
#
#
#
# 9
# 9
# 9
# 9
6
6
6
6
5
6
6
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6
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0,5
6
6
6
6
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6
9
9
9
9
1,0
,DM5 <
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,DM5 <
,DM5
,DM5
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7
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1,5
9 ,DM5 <
9 ,DM5 <
9 ,DM5 <
9 ,DM5 <
8
!&' v!x
!U' v!x
6
6
6
6
2,0
O
O
O
O
9
O
O
O
O
O
O
O
O
2,5
6
6
6
6
DF650R17IE4
10
Q
Q
Q
Q
6Q
6Q
6Q
6Q
3,0
Q
Q
Q
Q
O
O
O
O
11
3,5
6Q
6Q
6Q
6Q
4,0
12
5
2
2
2
2
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!U' ) `*1 !R U.- ) *
7
7
7
7
6
6
6
6
1300
1200
1100
1000
#
#
#
#
900
800
700
600
500
400
300
200
100
550
500
450
400
350
300
250
200
150
100
6 #
6 #
6 #
6 #
50
0
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
# 9
# 9
# 9
# 9
6
6
6
6
0
200
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,DM5
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,DM5
400
!
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,DM5 <
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[R U.bb )
[R U.bb )
[R U.bb )
6
6
6
6
600
!&' v!x
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O
O
O
O
O
O
O
O
Vorläufige Daten
preliminary data
6
6
6
6
O
O
O
O
800
+ [R !&' )
+ [R !&' )
+ [R !&' )
+ [R !&' )
6Q
6Q
6Q
6Q
Q
Q
Q
Q
O
O
O
O
Q
Q
Q
Q
1000
6Q
6Q
6Q
6Q
1200
!
!
!
!