BLF6G13L-250P,112 NXP Semiconductors, BLF6G13L-250P,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G13L-250P,112
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G13L-250P,112

• Voltage - Rated: 100V
• Transistor Type: LDMOS (Dual)
• Frequency: 1.3GHz
• Gain: 15dB
• Current Rating: 42A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 100V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 15@50VdB
• Package Type: CDFM
• Pin Count: 5
• Drain Source Resistance (max): 340@6Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF6G13L-250P_6G13LS-250P
Objective data sheet
Table 9.
For application circuit see
[1]
[2]
[3]
Component
R1, R2
SR1
SR2
American Technical Ceramics type 800B or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 200B or capacitor of same quality.
List of components
BLF6G13L-250P; BLF6G13LS-250P
All information provided in this document is subject to legal disclaimers.
Description
SMD resistor 0603
COAX
COAX
Rev. 2 — 21 March 2011
Figure
6.
…continued
Value
5.1 
25 
35 
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
Remarks
UT-141C-25-TP
UT-141C-35-TP
7 of 13