AUIRL3705ZS International Rectifier, AUIRL3705ZS Datasheet - Page 8

• Manufacturer Part Number: AUIRL3705ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRL3705ZS

• Input Capacitance (ciss) @ Vds: 2880pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 86A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 130W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 86 A
• Power Dissipation: 130 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
150
125
100
75
50
25
0
100
0.1
10
25
1.0E-05
1
Fig 16. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
0.10
0.05
0.01
50
Duty Cycle = Single Pulse
TOP
BOTTOM 1% Duty Cycle
I D = 52A
75
vs. Temperature
100
Single Pulse
1.0E-04
Fig 15. Typical Avalanche Current vs.Pulsewidth
125
150
175
tav (sec)
1.0E-03
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
t
D = Duty cycle in avalanche = t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
Z
av
av =
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
1.0E-02
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
pulsewidth,
Tj = 25°C due to
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
av
av
. This is validated for
·f
tav
) = DT/ Z
·t
th
av
]
1.0E-01
thJC
www.irf.com
jmax
is