AUIRL3705ZS International Rectifier, AUIRL3705ZS Datasheet - Page 7

• Manufacturer Part Number: AUIRL3705ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRL3705ZS

• Input Capacitance (ciss) @ Vds: 2880pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 5V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 86A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0065ohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 130W
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 86 A
• Power Dissipation: 130 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
V
G
1K
I
Q
R G
AS
20V
V
GS
V DS
GS
t p
I AS
Q
Charge
D.U.T
Q
DUT
t p
GD
G
0.01
L
L
V
(BR)DSS
15V
DRIVER
VCC
+
-
V DD
A
500
400
300
200
100
3.0
2.5
2.0
1.5
1.0
0.5
0
-75 -50 -25
25
Fig 14. Threshold Voltage vs. Temperature
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
50
I D = 250µA
T J , Temperature ( °C )
0
75
25
vs. Drain Current
50
100
75 100 125 150 175 200
TOP
BOTTOM 52A
125
150
I D
8.5A
5.7A
175
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