BUK9520-100B,127 NXP Semiconductors, BUK9520-100B,127 Datasheet - Page 4

• Manufacturer Part Number: BUK9520-100B,127
• Description: MOSFET N-CH 100V 63A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9520-100B,127

• Input Capacitance (ciss) @ Vds: 5657pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5227

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9520-100B_1
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
(A)
10
10
10
10
10
I
D
10
-1
3
2
1
-1
-2
-3
1
1e -6
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Transient thermal impedance from junction to mounting base as a function of pulse duration
1
Thermal characteristics
δ = 0.5
0.2
0.1
0.05
0.02
s ingle s hot
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Limit R
10
-5
DSon
= V
DS
/ I
Conditions
see
vertical in still air; SOT78 package
D
DC
Figure 4
10
10
-4
Rev. 01 — 6 May 2009
10
-3
10
10
N-channel TrenchMOS logic level FET
-2
2
t
100 μs
1ms
10 ms
100 ms
p
= 10 μs
BUK9520-100B
Min
-
-
10
P
-1
V
Typ
-
60
DS
t
p
(V)
T
t
p
© NXP B.V. 2009. All rights reserved.
(s )
003a a c770
003aac769
δ =
Max
0.75
-
t
T
p
t
10
1
3
Unit
K/W
K/W
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