BUK9520-55A NXP Semiconductors, BUK9520-55A Datasheet
BUK9520-55A
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BUK9520-55A Summary of contents
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... BUK9520-55A N-channel TrenchMOS logic level FET Rev. 02 — 8 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT78 © NXP B.V. 2010. All rights reserved. ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET Min Typ Max - - - ...
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... T 10 Conditions see Figure 4 vertical in still air ; SOT78 package −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET 03nc94 = 10 μ 100 μ 100 (V) ...
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... see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET Min Typ Max 0 1 2.3 - ...
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... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET 30 DSon Drain-source on-state resistance as a function of drain current; typical values ...
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... DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET 14V charge; typical values ...
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... I S (A) 100 80 = 175 ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET C iss C oss C rss 500 0 −2 − function of drain-source voltage; typical values 03nc86 = 25 °C ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9520-55A separated from data sheet BUK9520_9620_55A-01. BUK9520_9620_55A-01 20010129 (9397 750 07794) BUK9520-55A ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 June 2010 BUK9520-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 8 June 2010 Document identifier: BUK9520-55A ...