BUK9Y09-40B,115 NXP Semiconductors, BUK9Y09-40B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK9Y09-40B,115
• Description: MOSFET N-CH 40V 75A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y09-40B,115

• Input Capacitance (ciss) @ Vds: 2866pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Power - Max: 105.3W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5523-2

NXP Semiconductors
BUK9Y09-40B
Product data sheet
Fig 6.
Fig 8.
R
(mΩ)
(A)
I
DSon
D
200
150
100
25
20
15
10
50
5
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
10
2.5
2
5
50
3
4
100
3.5
V
6
GS
(V) = 10
V
GS
4
150
4.5
(V) = 2
5
4.5
All information provided in this document is subject to legal disclaimers.
8
003aac865
003aac863
I
V
D
DS
3.5
2.5
(A)
3
4
(V)
200
10
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
V
GS(th)
(V)
g
(S)
fs
80
70
60
50
40
30
2.5
1.5
0.5
2
1
0
-60
drain current; typical values.
junction temperature
Forward transconductance as a function of
Gate-source threshold voltage as a function of
0
N-channel TrenchMOS logic level FET
20
0
max
typ
min
BUK9Y09-40B
40
60
120
60
© NXP B.V. 2010. All rights reserved.
003aac866
003aad557
T
I
D
j
(°C)
(A)
180
80
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