BUK9Y09-40B,115 NXP Semiconductors, BUK9Y09-40B,115 Datasheet
BUK9Y09-40B,115
Specifications of BUK9Y09-40B,115
Related parts for BUK9Y09-40B,115
BUK9Y09-40B,115 Summary of contents
Page 1
... BUK9Y09-40B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
Page 2
... see DS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET Min ≤ sup = Figure 13 Graphic symbol G mbb076 ...
Page 3
... Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET Min Typ Max - - - 300 - - 105.3 -55 - 175 ...
Page 4
... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac485 (1) (2) ( (ms) AL 003aab844 200 T (°C) mb © ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y09-40B Product data sheet = DSon Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET 003aac606 = 10 μ 100 μ 100 (V) DS Min Typ Max - - 1 ...
Page 6
... Figure 1.2 Ω Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET Min Typ Max 1.25 1.65 2.15 0 2. 500 - 2 100 - 2 100 - 6 ...
Page 7
... V (V) DS Fig 7. 003aac865 3 150 200 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET ( Forward transconductance as a function of drain current; typical values. 2.5 V GS(th) max (V) 2 typ 1.5 ...
Page 8
... V (V) GS Fig 11. Drain-source on-state resistance as a function 03nb25 120 180 T (°C) j Fig 13. Gate-source voltage as a function of turn-on All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET gate-source voltage; typical values (V) 4 ...
Page 9
... DS Fig 15. Reverse diode current as a function of reverse 003aac868 = 175 ° ° (V) GS All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET 175 ° 0.3 0.6 0.9 diode voltage; typical values. 4 003aac870 = 25 ° ...
Page 10
... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 ...
Page 11
... Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET Supersedes BUK9Y09-40B_3 BUK9Y09-40B_2 © NXP B.V. 2010. All rights reserved ...
Page 12
... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y09-40B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK9Y09-40B ...