PSMN014-40YS,115 NXP Semiconductors, PSMN014-40YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN014-40YS,115
• Description: MOSFET N-CH 40V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-40YS,115

• Input Capacitance (ciss) @ Vds: 702pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5578-2

NXP Semiconductors
PSMN014-40YS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
DSon
V
(V)
GS
30
25
20
15
10
10
5
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
6.5
20
3
40
6
8V
7
32V
60
9
8
V
V
GS
DS
80
12
All information provided in this document is subject to legal disclaimers.
003aad303
(V) = 20
003aad306
= 20V
Q
I
D
G
(A)
(nC)
15
10
Rev. 03 — 25 October 2010
100
15
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN014-40YS
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aad307
(V)
C
C
C
oss
rss
iss
10
2
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