PSMN014-40YS,115 NXP Semiconductors, PSMN014-40YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN014-40YS,115
• Description: MOSFET N-CH 40V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-40YS,115

• Input Capacitance (ciss) @ Vds: 702pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 56W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5578-2

NXP Semiconductors
Table 6.
PSMN014-40YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
1200
(pF)
1000
g
C
800
600
400
20
fs
15
10
5
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
5
5
10
10
…continued
15
15
20
20
All information provided in this document is subject to legal disclaimers.
003aad309
003aad308
V
I
GS
D
C
C
(A)
rss
(V)
iss
Rev. 03 — 25 October 2010
Conditions
I
see
I
V
25
25
S
S
GS
= 5 A; V
= 25 A; dI
Figure 17
= 0 V; V
N-channel LFPAK 40 V, 14 mΩ standard level MOSFET
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 40 V
R
(mΩ)
(A)
DSon
I
D
60
50
40
30
20
10
40
30
20
10
j
0
0
= 25 °C;
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
5
2
T
j
10
= 175 °C
PSMN014-40YS
Min
-
-
-
4
15
Typ
0.8
22
17
T
j
= 25 °C
6
V
© NXP B.V. 2010. All rights reserved.
GS
003aad304
V
003aad310
GS
(V)
Max
1.2
-
-
(V)
20
8
Unit
V
ns
nC
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