DG309BDJ-E3 Vishay, DG309BDJ-E3 Datasheet - Page 3

• Manufacturer Part Number: DG309BDJ-E3
• Description: Analog Switch ICs SPST Analog Switch
• Manufacturer: Vishay

Specifications of DG309BDJ-E3

• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 160 Ohms
• On Time (max): 300 ns
• Off Time (max): 200 ns
• Supply Voltage (max): 44 V
• Supply Voltage (min): 4 V
• Maximum Power Dissipation: 470 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Package / Case: PDIP-16
• Minimum Operating Temperature: - 40 C
• Analog Switch Type: SPST
• No. Of Channels: 4
• On State Resistance Max: 85ohm
• Turn Off Time: 150ns
• Turn On Time: 200ns
• Supply Voltage Range: 4V To 44V
• Operating Temperature Range: -40°C To +85°C
• Analogue Switch Type: CMOS
• Channels, Number Of: 4
• Resistance, Rds On: 45R
• Temp, Op. Max: 85(degree C)
• Temp, Op. Min: -40(degree C)
• Pins, Number Of: 16
• Case Style: DIL
• Base Number: 309
• Ic Generic Number: 309
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
R
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input, Voltage High
Input, Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off-Isolation
Channel-to-Channel
Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Power Supply Range for
Continuous Operation
DS(on)
Match
e
a
I
INH
V
R
Symbol
R
ANALOG
C
C
C
X
OIRR
I
I
I
V
DS(on)
V
t
V
S(off)
D(off)
D(on)
C
t
OFF
S(off)
D(off)
D(on)
TALK
DS(on)
ON
Q
I+
INH
or I
I-
INL
OP
IN
INL
C
L
= 1000 pF, V
V
V
V
V
V
C
S
D
S
V+ = 15 V, V- = - 15 V
D
V
V
D
L
=
= 1 V
=
S
Unless Specified
= V
V
V
V
Test Conditions
S
=
= 15 pF, R
±
±
= 3 V, see figure 2
IN
S
IN
= 0 V, f = 1 MHz,
V
±
= V
S
14 V, V
14 V, V
= 11 V, 3.5 V
INH
= 0 V or 15 V
RMS
10 V, I
= 0 V, f = 1 MHz
D
or V
g
=
, f = 100 kHz
= 0 V, R
D
±
S
L
S
INL
=
=
= 50 
14 V
= 1 mA
±
±
14 V
14 V
f
g
= 0 
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
±
±
±
Typ.
45
16
90
95
0.01
0.01
0.02
2
5
1
5
5
c
- 55 °C to 125 °C
Min.
- 0.5
- 0.5
- 0.5
- 20
- 20
- 40
- 15
±
- 1
- 1
- 5
11
A Suffix
4
DG308B, DG309B
d
Max.
±
100
200
150
0.5
0.5
0.5
3.5
15
85
20
20
40
1
1
5
22
Vishay Siliconix
d
- 40 °C to 85 °C
Min.
- 0.5
- 0.5
- 0.5
- 15
- 10
±
- 5
- 5
11
- 1
- 1
- 5
D Suffix
4
d
www.vishay.com
Max.
±
100
200
150
0.5
0.5
0.5
3.5
15
85
10
5
5
1
1
5
22
d
Unit
pC
nA
µA
pF
pF
dB
µA
ns
%

V
V
V
3