ZXMD63C02XTA Diodes Inc, ZXMD63C02XTA Datasheet - Page 9

• Manufacturer Part Number: ZXMD63C02XTA
• Description: MOSFET Small Signal 20V N&P Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXMD63C02XTA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 4.5 V @ N Channel or 0.27 Ohm @ 4.5 V @ P Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A @ N Channel or 1.7 A @ P Channel
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PROVISIONAL ISSUE A - JUNE 1999
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.1
1
Typical Transfer Characteristics
On-Resistance v Drain Current
+25 C
VDS=-10V
T=150 C
-V
T=25 C
-V
1.5
Output Characteristics
DS
GS
4.5V
-I
- Drain-Source Voltage (V)
5V
4V
- Gate-Source Voltage (V)
D
2
P-CHANNEL CHARACTERISTICS
- Drain Current (A)
1
2.5
1
VGS=-3V
VGS=-5V
3
10
3.5
-VGS
3V
2V
3.5V
2.5V
4
100
4.5
10
9
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-100
0.1
0.2
Normalised R
+150°C
-V
-V
T
-50
0.4
Output Characteristics
j
DS
SD
- Junction Temperature (°C)
- Drain-Source Voltage (V)
- Source-Drain Voltage (V)
4.5V
v Temperature
4V
5V
0.6
1
0
DS(on)
0.8
50
ZXMD63C02X
T=150°C
T=25°C
VGS(th)
RDS(on)
100
and V
1.0
10
VGS=VDS
ID=-250uA
ID=-1.2A
150
3V
-VGS
2V
1.2
3.5V
2.5V
VGS=-4.5V
GS(th)
100
200
1.4