ZXMD63C02XTA Diodes Inc, ZXMD63C02XTA Datasheet - Page 6

• Manufacturer Part Number: ZXMD63C02XTA
• Description: MOSFET Small Signal 20V N&P Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXMD63C02XTA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 4.5 V @ N Channel or 0.27 Ohm @ 4.5 V @ P Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A @ N Channel or 1.7 A @ P Channel
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXMD63C02X
PROVISIONAL ISSUE A - JUNE 1999
0.01
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.1
1
Typical Transfer Characteristics
On-Resistance v Drain Current
+25°C
VDS=10V
T=150°C
T=25°C
V
V
1.5
VGS=3V
VGS=5V
DS
Output Characteristics
GS
- Drain-Source Voltage (V)
- Gate-Source Voltage (V)
I
5V
D
- Drain Current (A)
4.5V
1
2
1
4V
N-CHANNEL TYPICAL CHARACTERISTICS
2.5
3.5V
10
10
3
VGS
3V
2V
3.5
2.5V
100
100
4
6
100
100
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-100
Normalised R
0.1
0.2
+150°C
V
V
T
-50
0.4
DS
SD
Output Characteristics
j
- Junction Temperature (°C)
- Drain-Source Voltage (V)
- Source-Drain Voltage (V)
v Temperature
0.6
5V 4.5V
1
0
DS(on)
0.8
50
4V
T=150°C
T=25°C
3.5V
and V
100
VGS(th)
1.0
10
RDS(on)
GS(th)
VGS
150
VGS=VDS
1.2
3V
2V
ID=250uA
2.5V
VGS=4.5V
ID=1.7A
100
200
1.4