VN2210N3-G Supertex, VN2210N3-G Datasheet - Page 2

• Manufacturer Part Number: VN2210N3-G
• Description: MOSFET Small Signal 100V 0.35Ohm
• Manufacturer: Supertex

Specifications of VN2210N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
Thermal Characteristics
ΔV
R
BV
V
†
Sym
t
I
C
1.
2.
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
Package
GS(th)
GSS
DSS
DS(ON)
t
OSS
GS(th)
RSS
t
t
ISS
SD
rr
FS
r
f
TO-39
TO-92
DSS
I
D
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
(continuous) is limited by max rated T
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage current
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Rise time
Turn-off time
Fall time
Diode forward voltage drop
Reverse recovery time
Supertex inc.
OUTPUT
INPUT
VDD
(continuous)
10V
0V
0V
GS(th)
1.7
1.2
DS(ON)
10%
(A)
I
D
with temperature
with temperature
†
t
d(ON)
10%
t
(ON)
●
90%
1235 Bordeaux Drive, Sunnyvale, CA 94089
(pulsed)
j
t
.
O
r
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
8.0
(T
(A)
10
I
D
A
= 25°C unless otherwise specified)
90%
t
d(OFF)
Power Dissipation
t
(OFF)
@T
t
90%
f
C
10%
6.0
1.0
(W)
= 25
1200
Min
100
0.8
3.0
8.0
2
O
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
0.27
0.85
Typ
-4.3
300
125
500
4.5
0.4
1.0
17
50
10
10
50
30
-
-
-
-
-
-
Generator
●
(
O
Pulse
125
θ
C/W)
Tel: [phone]
21
Max
0.35
-5.5
JC
100
500
200
2.4
0.5
1.2
1.6
50
10
65
15
15
65
50
INPUT
R
-
-
-
-
-
GEN
mV/
mmho
Units
%/
mA
nA
µA
pF
ns
ns
V
V
Ω
V
A
(
O
O
125
170
O
θ
C
C/W)
C
JA
●
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
www.supertex.com
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
= 2.0A,
= 0.8 Max Rating,
= 25V, I
= 25V,
= 0V, I
= V
= V
= ±20V, V
= 0V, V
= 0V, T
= 5.0V, V
= 10V, V
= 5.0V, I
= 10V, I
= 10V, I
= 0V,
= 25V,
= 0V, I
= 0V, I
V
R
= 10Ω
DD
L
DS
DS
I
1.7
1.2
D.U.T.
(A)
DR
, I
, I
OUTPUT
†
D
SD
SD
A
D
D
DS
D
D
D
= 10mA
D
= 125
DS
= 10mA
= 10mA
= 4.0A
= 1.0A
DS
= 4.0A
= 4.0A
= 2.0A
DS
= Max Rating
= 1.0A
= 25V
VN2210
= 25V
= 0V
O
C
I
8.0
(A)
DRM
10