VN2210N3-G Supertex, VN2210N3-G Datasheet

VN2210N3-G

Manufacturer Part Number

VN2210N3-G

Description

MOSFET Small Signal 100V 0.35Ohm

Manufacturer

Supertex

Datasheet

1.VN2210N3-G.pdf (6 pages)

Specifications of VN2210N3-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.35 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.2 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

-G

†

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Supertex inc.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

indicates package is RoHS compliant (‘Green’)

package is RoHS compliant (‘Green’)

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VN2210

Device

ISS

Supertex inc.

and fast switching speeds

VN2210N2

TO-39

Package Options

†

●

N-Channel Enhancement-Mode

Vertical DMOS FETs

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55°C to +150°C

VN2210N3-G

+300°C

TO-92

Value

±20V

DGS

DSS

General Description

The Supertex VN2210 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁgurations

Product Marking

Package may or may not include the following marks: Si or

SOURCE

TO-39 (N2)

DSS

●

Y Y W W

2 2 1 0

100

Si VN

(V)

Tel: 408-222-8888

/BV

GATE

DGS

DRAIN

YYWW

2210N2

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

TO-39 (N2)

YY = Year Sealed

WW = Week Sealed

●

= “Green” Packaging

(max)

0.35

www.supertex.com

DS(ON)

(Ω)

SOURCE

TO-92 (N3)

VN2210

DRAIN

GATE

(min)

D(ON)

8.0

(A)

Related parts for VN2210N3-G

VN2210N3-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. TO-92 VN2210N3-G † Pin Conﬁgurations Product Marking Value BV ...

Page 2

... SD t Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V Supertex inc. ● I Power Dissipation D (pulsed (A) (W) 10 6.0 8.0 1 25°C unless otherwise speciﬁed) A ...

Page 3

... Transconductance vs. Drain Current 4 3.2 2.4 1.6 0 0.8 1.6 I (amperes) D Maximum Rated Safe Operating Area 10 TO-92 (pulsed) TO-39 (DC) 1 TO-92 (DC) 0 0.01 0 (volts) DS Supertex inc 10V 150 C O 2.4 3.2 4.0 TO-39 (pulsed) 10 100 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics 10V ...

Page 4

... Transfer Characteristics - (volts) GS Capacitance vs. Drain-to-Source Voltage 500 f = 1.0MHz 375 250 125 (volt) DS Supertex inc. (cont.) 100 150 150 ISS C OSS C RSS 30 40 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current 1 5. 10V GS 0.6 0.4 0 (amperes and RV ...

Page 5

... Bottom View Symbol α MIN Dimension 45 O NOM (inches) NOM NOM MAX JEDEC Registration TO-39. * This dimension is not speciﬁed in the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO39N2, Version B052009. Supertex inc. β β A Φa Φb .240 .190 .016 ...

Page 6

... This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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