TN0606N3-G Supertex, TN0606N3-G Datasheet - Page 4

• Manufacturer Part Number: TN0606N3-G
• Description: MOSFET Small Signal 60V 1.5Ohm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of TN0606N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.8 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
200
150
100
1.1
1.0
0.9
50
10
0
8
6
4
2
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
BV
DS
DSS
2
= 25V
Transfer Characteristics
10
0
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
20
(
(volts)
O
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
100
30
(cont.)
8
C
C
RSS
ISS
150
10
40
4
1.4
1.2
1.0
0.8
0.6
10
5
4
3
2
1
0
8
6
4
2
0
-50
0
0
●
V
(th)
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
and R
V
0.5
2
(th)
0
V
95 pF
@ 1mA
DS
Q (nanocoulombs)
GS
G
I
D
Variation with Temperature
= 5V
1.0
(amperes)
4
V
T
DS
j
50
(
O
= 10V
C)
●
R
DS
1.5
6
www.supertex.com
172 pF
@ 10V, 0.75A
V
100
V
GS
DS
2.0
8
= 10V
= 40V
150
2.5
10
2.0
1.6
1.2
0.8
0.4
0
TN0606