TN0606N3-G Supertex, TN0606N3-G Datasheet
TN0606N3-G
Manufacturer Part Number
TN0606N3-G
Description
MOSFET Small Signal 60V 1.5Ohm
Manufacturer
Supertex
Type
Power MOSFETr
Specifications of TN0606N3-G
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.8 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
1.5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Ordering Information
†
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
BV
BV
MIL visual screening available
Distance of 1.6 mm from case for 10 seconds.
100V
60V
DSS
Low threshold — 2.0V max.
High input impedance
Low input capacitance — 100pF typical
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
DGS
/ R
(max)
1.5
1.5
DS(ON)
(min)
I
3.0A
3.0A
D(ON)
V
(max)
2.0V
2.0V
GS(th)
TN0606N3
TN0610N3
Order Number / Package
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
TN0606N5
BV
BV
300 C
TO-220
20V
—
DGS
DSS
7-51
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Note:
1. See Package Outline section for dimensions
TAB: DRAIN
TO-220
G
D S
Low Threshold
TO-92
S G D
TN0606
TN0610
7
Related parts for TN0606N3-G
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer:
Supertex, Inc.
Datasheet:
Part Number:
Description:
32-channel Serial To Parallel Converter With High Voltage Push-pull Outputs - Supertex, Inc
Manufacturer:
Supertex, Inc.
Datasheet:
TN0606N3-G Summary of contents
Page 1
... DSS DS(ON) D(ON) GS(th) BV (max) (min) (max) DGS 60V 1.5 3.0A 2.0V TN0606N3 100V 1.5 3.0A 2.0V TN0610N3 † MIL visual screening available Features Low threshold — 2.0V max. High input impedance Low input capacitance — 100pF typical Fast switching speeds ...
Page 2
Thermal Characteristics Package I (continuous)* D TO-92 0.8A TO-220 3. (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) V Change in V ...
Page 3
Typical Performance Curves Output Characteristics (volts) DS Transconductance vs. Drain Current 1.0 V 0 ...
Page 4
Typical Performance Curves BV Variation with Temperature DSS 1.1 1.0 0.9 - Transfer Characteristics 25V (volts) GS Capacitance vs. Drain-to-Source ...