FDC658AP Fairchild Semiconductor, FDC658AP Datasheet - Page 4

• Manufacturer Part Number: FDC658AP
• Description: MOSFET Small Signal -30VSgl P-Chl LogLv PwrTrch MOSFET
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDC658AP

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8.4 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 4 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SuperSOT
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDC658AP Rev. B (W)
Typical Characteristics
Figure 9.
Figure 7.
0.01
100
0.1
10
10
8
6
4
2
0
1
0.001
0.1
0.01
0
0.1
0.00001
r
I
DS(on)
1
D
SINGLE PULSE
R
= -4A
θJA
V
Forward Bias Safe Operating Area
T
GS
A
LIMIT
= 156
= 25
D = 0.5
= -10V
Gate Charge Characteristics
0.2
0.1
2
0.05
o
o
-V
0.02
C
C/W
0.01
DS
, DRAIN TO SOURCE VOLTAGE (V)
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0.0001
Q
1
SINGLE PULSE
g
, GATE CHARGE (nC)
4
Figure 11.
0.001
6
V
10
DS
= -5V
Transient Thermal Response Curve
8
-15V
t, RECTANGULAR PULSE DURATION
100us
100ms
1ms
10ms
1s
DC
0.01
-10V
100
10
4
Figure 8.
0.1
Figure 10.
600
450
300
150
10
8
6
4
2
0
0
0.01
0
Capacitance vs Drain to Source Voltage
C
1
rss
6
Single Pulse Maximum Power
-V
C
0.1
oss
DS
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation
t, PULSE WIDTH (s)
10
12
C
iss
1
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
18
(t) = r(t) + R
A
= 156
t
100
1
= P * R
t
2
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o
SINGLE PULSE
C/W
R
10
θJA
θJA
T
1
θJA
24
A
(t)
/ t
= 156°C/W
= 25°C
2
f = 1 MHz
V
GS
1000
= 0 V
100
30