FDC658AP Fairchild Semiconductor, FDC658AP Datasheet - Page 3

• Manufacturer Part Number: FDC658AP
• Description: MOSFET Small Signal -30VSgl P-Chl LogLv PwrTrch MOSFET
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDC658AP

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8.4 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 4 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SuperSOT
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.05Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDC658AP Rev. B (W)
Typical Characteristics
Figure 3.
1.6
1.4
1.2
0.8
0.6
20
15
10
Figure 1.
15
12
5
0
1
9
6
3
0
Figure 5. Transfer Characteristics
-50
0
1
V
Normalized On-Resistance vs Junction
GS
V
I
D
V
GS
-6.0V
= -10V
DS
= -4.0A
-25
= -10V
= -5V
1
On-Region Characteristics
-V
-V
T
0
DS
J
Temperature
2
GS
, JUNCTION TEMPERATURE (
-5.0V
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
25
-4.5V
2
50
3
T
J
-4.0V
= -55
3
75
o
C
-3.5V
125
100
o
C)
4
o
C
4
-3.0V
25
125
o
C
150
5
5
3
Figure 6.
Figure 2.
Figure 4.
0.0001
0.001
1.8
1.6
1.4
1.2
0.8
0.22
0.18
0.14
0.06
0.02
0.01
0.1
0.1
2
1
10
1
0
2
0
V
T
GS
J
Source to Drain Diode Forward Voltage
= 25
V
= 0V
GS
Normalized On-Resistance vs Drain
Current and Gate Voltage
On-Resistance vs Gate to Source
o
= -4.5V
0.2
C
-V
4
SD
-V
vs Source Current
, BODY DIODE FORWARD VOLTAGE (V)
GS
T
4
J
, GATE TO SOURCE VOLTAGE (V)
= 125
-I
-5.0V
T
D
0.4
J
, DRAIN CURRENT (A)
Voltage
= 125
o
C
8
-6.0V
o
C
0.6
25
6
o
C
-7.0V
12
-55
0.8
o
C
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-8.0V
8
16
I
D
1
= -2.0A
-10V
1.2
20
10