SI4825DDY-T1-GE3 Vishay, SI4825DDY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4825DDY-T1-GE3
• Description: MOSFET Power 30V 14.9A 5.0W 12.5mohm @ 10V
• Manufacturer: Vishay

Specifications of SI4825DDY-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 2700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -25V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4825DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
http://www.vishay.com/ppg?68926.
1
10
10
-4
-4
0.05
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
0.02
0.1
0.2
Duty Cycle = 0.5
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Single Pulse
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-- T
t
1
1
A
= P
S-82484-Rev. A, 13-Oct-08
t
2
Document Number: 68926
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 85 °C/W
1000
1
0