si4825ddy Vishay, si4825ddy Datasheet

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si4825ddy

Manufacturer Part Number
si4825ddy
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on T
Document Number: 68926
S-82484-Rev. A, 13-Oct-08
Ordering Information: Si4825DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 30
(V)
G
S
S
S
C
0.0125 at V
0.0205 at V
1
2
3
4
= 25 °C.
R
Top View
DS(on)
SO-8
GS
GS
(Ω)
= - 4.5 V
= - 10 V
J
= 150 °C)
a, c
8
7
6
5
P-Channel 30-V (D-S) MOSFET
D
D
D
D
I
- 14.9
- 11.6
D
(A)
d
A
Q
29.5 nC
= 25 °C, unless otherwise noted
g
(Typ.)
Steady State
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Load Switch
• Notebook Adaptor Switch
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
g
stg
Tested
®
Power MOSFET
Typical
G
38
20
P-Channel MOSFET
S
D
- 55 to 150
- 10.9
- 8.6
- 2.2
2.7
1.7
- 14.9
- 11.9
Limit
± 25
- 4.1
Maximum
- 30
- 60
- 20
5.0
3.2
20
a, b
a, b
a, b
a, b
Vishay Siliconix
a, b
46
25
Si4825DDY
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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si4825ddy Summary of contents

Page 1

... Top View Ordering Information: Si4825DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4825DDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product 1.5 2.0 2.5 4000 3200 2400 1600 800 Si4825DDY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si4825DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0. °C J 0.06 0.04 0.02 0.00 0.8 1.0 1.2 170 I = 250 µA D 136 102 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4825DDY Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4825DDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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