ZXMN6A25DN8TA Diodes Inc, ZXMN6A25DN8TA Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A25DN8TA
• Description: MOSFET Power Dl 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A25DN8TA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics (at T
(*) Measured under pulsed conditions. Width=300 s. Duty cycle
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall Time
Gate charge
Total gate charge
Gate-source charge
Gate-drain charge
Source-drain diode
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(‡)
(*)
(‡)
(*)(‡)
amb
Symbol
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
Min.
1.0
60
4
1063
Typ.
10.2
26.2
10.6
11.0
20.4
0.85
22.0
21.4
104
2% .
3.8
4.0
4.1
5.1
64
0.050
0.070
Max.
0.95
100
1.0
ZXMN6A25DN8
Unit Conditions
mA
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
I
V
I
V
V
V
V
V
V
RG≅6.0 , V
V
I
V
I
T
I
T
di/dt= 100A/ s
D
V
D
D
D
S
J
J
DS
GS
GS
DS
DS
GS
DD
DS
DS
=5.5A,V
=250 A, V
=250 A, V
=4.5A
=4.5A
GS
=25°C,
=25°C, I
=60V, V
=15V,I
=30V,
=30V,V
=30V,V
=10V, I
=4.5V, I
=0V,f=1MHz
=±20V, V
=30V, I
www.zetex.com
GS
D
F
D
GS
GS
=2.2A,
D
=4.5A
D
GS
=3.6A
GS
=0V
GS
DS
=3A
=1A
=10V,
=5V,
DS
=0V
=10V
= V
=0V
=0V
GS