ZXMN6A25DN8TA Diodes Inc, ZXMN6A25DN8TA Datasheet

MOSFET Power Dl 60V N-Chnl UMOS

ZXMN6A25DN8TA

Manufacturer Part Number
ZXMN6A25DN8TA
Description
MOSFET Power Dl 60V N-Chnl UMOS
Manufacturer
Diodes Inc
Datasheet
1.ZXMN6A25DN8TA.pdf (8 pages)

Specifications of ZXMN6A25DN8TA

Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5 A
Power Dissipation
2100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ZXMN6A25DN8
Dual 60V SO8 N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex
features a unique structure combining the benefits of
low on-resistance and fast switching, making it ideal
for high efficiency power management applications.
Features
•
•
•
•
Applications
•
•
•
Ordering information
Device marking
ZXMN
6A25D
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
Device
ZXMN6A25DN8TA
ZXMN6A25DN8TC
V
Low on-resistance
Fast switching speed
Low gate drive
Low profile SO8 package
DC - DC converters
Power management functions
Motor control
(BR)DSS
60
0.070 @ V
0.050 @ V
R
DS(on)
(inches)
Reel
GS
GS
13
7
( )
= 4.5V
= 10V
Tape width
(mm)
12
12
I
D
4.2
5
(A)
1
Quantity
per reel
2500
500
G1
S1
D1
G2
G1
S2
S1
Pin out - top view
G2
www.zetex.com
D2
S2
D1
D1
D2
D2

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ZXMN6A25DN8TA Summary of contents

Page 1

... Low gate drive • Low profile SO8 package Applications • converters • Power management functions • Motor control Ordering information Device Reel (inches) ZXMN6A25DN8TA ZXMN6A25DN8TC Device marking ZXMN 6A25D Issue 4 - November 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 4.5V 4.2 ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at ...

Page 3

Typical characteristics Issue 4 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25DN8 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 4 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25DN8 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 4 - November 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 4 ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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