DN2470K4-G Supertex, DN2470K4-G Datasheet

MOSFET Power 700V 42Ohm

DN2470K4-G

Manufacturer Part Number
DN2470K4-G
Description
MOSFET Power 700V 42Ohm
Manufacturer
Supertex
Datasheet

Specifications of DN2470K4-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
42 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
500 mA
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-252 (DPAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
Applications
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Supertex inc.
Ordering Information
Parameter
Operating and storage temperature
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
DN2470
Device
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Battery operated systems
Telecom
Supertex inc.
TO-252 (D-PAK)
DN2470K4-G
Package
1235 Bordeaux Drive, Sunnyvale, CA 94089
N-Channel Depletion-Mode
Vertical DMOS FET
-55
BV
O
DSX
C to +150
700
(V)
/BV
DGX
Value
BV
BV
±20V
DGX
DSX
O
C
General Description
The DN2470 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FET is ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Package
Product Marking
R
(max)
DS(ON)
Package may or may not include the following marks: Si or
(Ω)
42
Si YYWW
LLLLLLL
DN2470
Tel: 408-222-8888
(typ)
(mA)
500
I
DSS
TO-252 (D-PAK) (K4)
TO-252 (D-PAK) (K4)
DRAIN
YY = Year Sealed
WW = Week Sealed
L = Lot Number
GATE
SOURCE
www.supertex.com
= “Green” Packaging
DN2470

Related parts for DN2470K4-G

DN2470K4-G Summary of contents

Page 1

... Battery operated systems ► Telecom Ordering Information Package Device TO-252 (D-PAK) DN2470 DN2470K4-G Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability ...

Page 2

... SD t Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT 10% -10V t (ON d(ON 10% OUTPUT 0V 90% Supertex inc. I Power Dissipation D (pulsed (mA) (W) 500 2.5 ‡ of 150 unless otherwise specified Min Typ ...

Page 3

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO252K4, Version F040910. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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