dn2470 Supertex, Inc., dn2470 Datasheet

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dn2470

Manufacturer Part Number
dn2470
Description
N-channel Depletion-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
Features
Applications
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Normally-on switches
Solid state relays
Converters
Linear amplifi ers
Constant current sources
Battery operated systems
Telecom
BV
DSX
700V
/BV
DGX
N-Channel Depletion-Mode Vertical DMOS FET
R
DS(ON)
42Ω
(max)
-55
O
C to +150
I
DSS
300
500mA
Value
BV
BV
±20V
(min)
DGX
DSX
O
O
C
C
General Description
The DN2470 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FET is ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Package Option
Package Options
TO-252 (D-PAK)
DN2470K4-G
TO-252 (D-PAK)
Gate
(top view)
Drain
Source
DN2470

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dn2470 Summary of contents

Page 1

... General Description The DN2470 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffi ...

Page 2

... DS D 540 V = -10V 1MHz 25V 100mA 25Ω, GEN 60 1 -5.0V -5.0V PULSE GENERATOR R GEN INPUT DN2470 DRM 500mA = 100µ -10V 125 C = 25V = 25V 200mA = 200mA OUTPUT D.U.T. ...

Page 3

... JEDEC Registration TO-252, Variation AA, Issue E, June 2004. Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN2470 A012307 ...

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