ZXMN6A25KTC Diodes Inc, ZXMN6A25KTC Datasheet - Page 4

MOSFET Power N-Chan 60V MOSFET (UMOS)

ZXMN6A25KTC

Manufacturer Part Number
ZXMN6A25KTC
Description
MOSFET Power N-Chan 60V MOSFET (UMOS)
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN6A25KTC

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.7 A
Power Dissipation
2110 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A25KTC
Manufacturer:
DIODES
Quantity:
10 000
Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature
(‡) For design aid only, not subject to production testing.
Issue 3 - Novmber 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain current I
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
V
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
amb
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
60
1
4
1063
Typ.
10.2
26.2
10.6
11.0
20.4
0.85
22.0
21.4
104
3.8
4.0
4.1
5.1
64
2%.
0.050
0.070
Max.
0.95
100
1.0
3
Unit Conditions
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMN6A25K
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250 A, V
= 1.4A
= 1.4A
=25°C, I
=25°C, I
≅6.0 , V
= 60V, V
= 15V, I
= 30V, V
= 30V, V
= 30V, V
=±20V, V
= 10V, I
= 4.5V, I
= 30V, I
=0V
www.zetex.com
S
S
= 5.5A,
= 2.2A,
GS
D
D
D
D
GS
GS
GS
GS
= 4.5A
= 3.6A
= 1A
DS
GS
DS
= 10V
= 3.0A
=0V
=0V
= 5V
= 10V
=0V
=V
=0V
GS

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