ZXMN6A25KTC Diodes Inc, ZXMN6A25KTC Datasheet

MOSFET Power N-Chan 60V MOSFET (UMOS)

ZXMN6A25KTC

Manufacturer Part Number
ZXMN6A25KTC
Description
MOSFET Power N-Chan 60V MOSFET (UMOS)
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN6A25KTC

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10.7 A
Power Dissipation
2110 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A25KTC
Manufacturer:
DIODES
Quantity:
10 000
ZXMN6A25K
60V DPAK N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A25
Issue 3 - Novmber 2006
© Zetex Semiconductors plc 2006
V
60
Device
ZXMN6A25KTC
(BR)DSS
Low on-resistance
Fast switching speed
Low gate drive
DPAK package
DC-DC converters
Power management functions
Disconnect switches
Motor control
0.070 @ V
0.050 @ V
R
DS(on)
Reel size
(inches)
13
GS
GS
( )
= 4.5V
= 10V
Tape width
(mm)
16
I
D
10.7
9
(A)
1
Quantity
per reel
2,500
Pinout - top view
www.zetex.com
G
G
D
D
S
D
S

Related parts for ZXMN6A25KTC

ZXMN6A25KTC Summary of contents

Page 1

... DPAK package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A25KTC 13 Device marking ZXMN 6A25 Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ( ) I ( 10V 10.7 = 4.5V 9 Tape width ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at T ...

Page 3

Thermal characteristics Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ZXMN6A25K 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching Turn-on-delay ...

Page 5

Typical characteristics Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ZXMN6A25K 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 3 - Novmber 2006 © Zetex Semiconductors plc 2006 ...

Page 7

Package outline - DPAK DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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