SUD50P06-15L-E3 Vishay, SUD50P06-15L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50P06-15L-E3
• Description: MOSFET Power P-CH 60V 50A
• Manufacturer: Vishay

Specifications of SUD50P06-15L-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Drain Current Id: -50A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 72250
S10-2545-Rev. C, 08-Nov-10
8000
7000
6000
5000
4000
3000
2000
1000
100
80
60
40
20
80
70
60
50
40
30
20
10
0
0
0
0
0
0
C
rss
10
10
1
V
V
V
C
T
GS
DS
DS
Output Characteristics
C
oss
= - 55 °C
Transconductance
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
20
20
Capacitance
V
C
GS
2
iss
= 10 V thru 4 V
30
30
3
40
40
4
50
50
125 °C
25 °C
3 V
60
60
5
0.025
0.020
0.015
0.010
0.005
0.000
10
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
V
I
D
DS
0.5
10
= 50 A
20
On-Resistance vs. Drain Current
= 30 V
V
1.0
20
Transfer Characteristics
GS
Q
g
- Gate-to-Source Voltage (V)
V
I
40
- Total Gate Charge (nC)
D
GS
1.5
30
- Drain Current (A)
Gate Charge
= 4.5 V
SUD50P06-15L
T
25 ° C
C
2.0
40
= 125 ° C
60
Vishay Siliconix
2.5
V
50
GS
80
= 10 V
www.vishay.com
3.0
60
- 55 °C
100
3.5
70
120
4.0
80
3