SUD50P06-15L Vishay, SUD50P06-15L Datasheet

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SUD50P06-15L

Manufacturer Part Number
SUD50P06-15L
Description
P-channel 60-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a.
b.
c.
d.
Document Number: 72250
S-31673—Rev. B 11-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
J
V
Duty cycle v 1%.
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
Package limited.
= 175_C)
DS
ti
- 60
- 60
(V)
t A bi
Ordering Information: SUD50P06-15L
t
b
b
G
Top View
TO-252
0.020 @ V
0.015 @ V
a
D
r
P-Channel 60-V (D-S), 175_C MOSFET
DS(on)
S
Parameter
Parameter
GS
GS
= - 4.5 V
= - 10 V
(W)
Drain Connected to Tab
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
T
L = 0.1 mH
T
T
t v 10 sec
T
C
C
C
A
I
= 125_C
New Product
D
- 50 d
= 25_C
= 25_C
= 25_C
- 50
(A)
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
DM
thJC
I
I
AR
thJA
DS
GS
AR
D
D
D
D
P-Channel MOSFET
stg
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Automtoive 12-V Boardnet
G
S
D
Typical
0.82
15
40
- 55 to 175
Limit
"20
136
SUD50P06-15L
- 50
3
125
- 60
- 39
- 80
- 50
b, c
Vishay Siliconix
d
c
Maximum
1.1
18
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
A
1

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SUD50P06-15L Summary of contents

Page 1

... 0.020 @ 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50P06-15L ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (T = 175_C) J Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Power Dissipation ...

Page 2

... SUD50P06-15L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... V - Drain-to-Source Voltage (V) DS Document Number: 72250 S-31673—Rev. B 11-Aug-03 New Product 0.025 25_C 0.020 125_C 0.015 0.010 0.005 0.000 SUD50P06-15L Vishay Siliconix Transfer Characteristics 125_C C 20 25_C 10 - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS On-Resistance vs ...

Page 4

... SUD50P06-15L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.8 D 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 T - Case Temperature (_C Duty Cycle = 0.5 ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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