CMPT5551 Central Semiconductor, CMPT5551 Datasheet

CMPT5551

Manufacturer Part Number

CMPT5551

Description

Bipolar Small Signal NPN GP

Manufacturer

Central Semiconductor

Datasheet

1.CMPT5551.pdf (2 pages)

Specifications of CMPT5551

Dc Collector/base Gain Hfe Min

80 at 1 mA at 5 V

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Package / Case

SOT-23

Collector- Emitter Voltage Vceo Max

160 V

Emitter- Base Voltage Vebo

6 V

Maximum Dc Collector Current

0.6 A

Power Dissipation

350 mW

Maximum Operating Frequency

300 MHz

Maximum Operating Temperature

+ 150 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

3000 PCS T&R

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CMPT5551

Manufacturer:

CENTR

Quantity:

12 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

CMPT5551 TR

Manufacturer:

CENTRAL

Quantity:

20 000

Current page: 1 of 2
Download datasheet (324Kb)

MAXIMUM RATINGS: (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

f T

C ob

h fe

NPN SILICON TRANSISTOR

SURFACE MOUNT

TEST CONDITIONS

V CB =120V

V CB =120V, T A =100°C

I C =100μA

I C =1.0mA

I E =10μA

I C =10mA, I B =1.0mA

I C =50mA, I B =5.0mA

I C =10mA, I B =1.0mA

I C =50mA, I B =5.0mA

V CE =5.0V, I C =1.0mA

V CE =5.0V, I C =10mA

V CE =5.0V, I C =50mA

V CE =10V, I C =10mA, f=100MHz

V CB =10V, I E =0, f=1.0MHz

V CE =10V, I C =1.0mA, f=1.0kHz

V CE =5.0V, I C =200μA, R S =10Ω,

f=10Hz to 15.7kHz

SOT-23 CASE

CMPT5551

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5551 type

is an NPN silicon transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for high voltage amplifier

applications.

MARKING CODE: 1FF

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

Θ JA

MIN

180

160

100

P D

6.0

I C

-65 to +150

MAX

0.15

0.20

1.00

180

160

600

350

357

250

300

200

6.0

8.0

w w w. c e n t r a l s e m i . c o m

R5 (1-February 2010)

UNITS

°C/W

MHz

μA

°C

Related parts for CMPT5551

CMPT5551 Summary of contents

Page 1

... V CE =10V =1.0mA, f=1.0kHz =5.0V =200μ =10Ω, f=10Hz to 15.7kHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF SYMBOL ...

Page 2

... CMPT5551 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 1FF (1-February 2010) ...

Related keywords

CMPT5551 datasheet
CMPT5551 data sheet
CMPT5551 pdf datasheet
CMPT5551 component
CMPT5551 part
CMPT5551 distributor
CMPT5551 RoHS
CMPT5551 datasheet download