CMPT5551 Central Semiconductor, CMPT5551 Datasheet
![Bipolar Small Signal NPN GP](/photos/16/4/160445/sot-23_shad_sml.jpg)
CMPT5551
Manufacturer Part Number
CMPT5551
Description
Bipolar Small Signal NPN GP
Manufacturer
Central Semiconductor
Datasheet
1.CMPT5551.pdf
(2 pages)
Specifications of CMPT5551
Dc Collector/base Gain Hfe Min
80 at 1 mA at 5 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
3000 PCS T&R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CMPT5551
Manufacturer:
CENTR
Quantity:
12 000
Part Number:
CMPT5551 TR
Manufacturer:
CENTRAL
Quantity:
20 000
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
BV CBO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
f T
C ob
h fe
NF
NPN SILICON TRANSISTOR
SURFACE MOUNT
TEST CONDITIONS
V CB =120V
V CB =120V, T A =100°C
I C =100μA
I C =1.0mA
I E =10μA
I C =10mA, I B =1.0mA
I C =50mA, I B =5.0mA
I C =10mA, I B =1.0mA
I C =50mA, I B =5.0mA
V CE =5.0V, I C =1.0mA
V CE =5.0V, I C =10mA
V CE =5.0V, I C =50mA
V CE =10V, I C =10mA, f=100MHz
V CB =10V, I E =0, f=1.0MHz
V CE =10V, I C =1.0mA, f=1.0kHz
V CE =5.0V, I C =200μA, R S =10Ω,
f=10Hz to 15.7kHz
SOT-23 CASE
CMPT5551
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5551 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING CODE: 1FF
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
Θ JA
MIN
180
160
100
P D
6.0
I C
80
80
30
50
-65 to +150
MAX
0.15
0.20
1.00
1.00
180
160
600
350
357
250
300
200
6.0
6.0
8.0
50
50
w w w. c e n t r a l s e m i . c o m
R5 (1-February 2010)
UNITS
UNITS
°C/W
MHz
mW
mA
nA
μA
pF
dB
°C
V
V
V
V
V
V
V
V
V
V
Related parts for CMPT5551
CMPT5551 Summary of contents
Page 1
... V CE =10V =1.0mA, f=1.0kHz =5.0V =200μ =10Ω, f=10Hz to 15.7kHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF SYMBOL ...
Page 2
... CMPT5551 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 1FF (1-February 2010) ...