ZXTP2008ZTA Diodes Inc, ZXTP2008ZTA Datasheet - Page 4

• Manufacturer Part Number: ZXTP2008ZTA
• Description: Bipolar Power 30V PNP Low Sat
• Manufacturer: Diodes Inc

Specifications of ZXTP2008ZTA

• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Frequency: 110 MHz
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 5.5 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
NOTES
* Measured under pulsed conditions. Pulse width
ZXTP2008Z
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
SYMBOL
BV
BV
I
I
R <1k
I
V
V
V
h
f
C
t
t
300 s; duty cycle
CBO
CER
EBO
T
ON
OFF
FE
CE(SAT)
BE(SAT)
BE(ON)
OBO
CBO
CER
CEO
EBO
amb
= 25°C unless otherwise stated)
MIN.
-7.0
100
100
-50
-50
-30
70
10
4
2%.
-860
TYP.
-130
-970
-8.0
225
200
145
110
230
-70
-70
-40
<-1
<-1
<-1
-25
-35
-55
-55
20
83
43
MAX.
-1070
-175
-960
-0.5
-0.5
300
-20
-20
-10
-40
-55
-80
-80
UNIT CONDITIONS
MHz
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
= -100 A
= -5.5A, I
= -10mA, V
= -1A, V
= -100 A
= -1 A, RB <1k
= -10mA *
= -0.5A, I
= -1A, I
= -1A, I
= -2A, I
= -5.5A, I
= -5.5A, V
= -5A, V
= -20A, V
= -100mA, V
= -1A, V
= -I
= -6V
= -40V
= -40V,T
= -40V
= -40V,T
= -10V, f = 1MHz *
B2
ISSUE 1 - JUNE 2005
= -100mA
B
B
B
CE
CE
CC
B
= -100mA *
B
= -20mA *
= -200mA *
B
CE
CE
= -500mA *
amb
amb
= -1V *
= -1V *
= -20mA *
=-500mA *
= -10V,
CE
= -1V *
CE
= -1V *
= -1V *
=100°C
=100°C
= -10V