ZXTP2008ZTA Diodes Inc, ZXTP2008ZTA Datasheet - Page 2

• Manufacturer Part Number: ZXTP2008ZTA
• Description: Bipolar Power 30V PNP Low Sat
• Manufacturer: Diodes Inc

Specifications of ZXTP2008ZTA

• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Frequency: 110 MHz
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 5.5 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ZXTP2008Z
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to Ambient
Junction to Ambient
(a)
(b)
A
A
=25°C
=25°C
(a)
(b)
(a)
SYMBOL
BV
BV
BV
I
I
P
P
T
SYMBOL
R
R
C
CM
2
D
D
j
, T
CBO
CEO
EBO
JA
JA
stg
-55 to 150
VALUE
LIMIT
16.8
-5.5
-50
-30
1.5
2.1
83
60
-20
12
-7
ISSUE 1 - JUNE 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
V
A
A