FCP36N60N Fairchild Semiconductor, FCP36N60N Datasheet - Page 2

• Manufacturer Part Number: FCP36N60N
• Description: Bipolar Power 600V NChannel MOSFET SupreMOS
• Manufacturer: Fairchild Semiconductor

Specifications of FCP36N60N

• Minimum Operating Temperature: - 55 C
• Transistor Polarity: PNP, N-Channel
• Mounting Style: Through Hole
• Package / Case: TO-220
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP36N60N Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
oss
oss
SD
AS
SD
g(tot)
gs
gd
rr
Device Marking
Symbol
DSS
= 12A, R
J
≤ 36A, di/dt ≤ 200A/μs, V
DSS
eff.
FCP36N60N
G
= 25Ω, Starting T
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
J
= 380V, Starting T
= 25°C
FCP36N60N
Device
Parameter
J
= 25°C
T
C
= 25
o
C unless otherwise noted
Package
TO-220
I
I
V
V
V
V
V
dI
V
V
V
Drain Open
V
R
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
G
F
= 1mA, V
= 1mA, Referenced to 25
/dt = 100A/μs
= 4.7Ω
= 480V, V
= 480V, V
= 0V, I
= ±30V, V
= 40V, I
= 0V, I
= V
= 10V, I
= 100V, V
= 380V, V
= 0V to 380V, V
= 380V, I
= 10V
= 380V, I
DS
Test Conditions
, I
SD
2
SD
GS
Reel Size
D
D
D
D
D
= 18A
= 18A
GS
GS
= 18A
DS
= 250μA
= 18A
GS
GS
= 0V, T
= 18A,
= 18A
-
= 0V
= 0V, T
= 0V
= 0V
= 0V, f = 1MHz
GS
C
= 0V
= 25
C
= 125
o
C
o
(Note 4)
C
(Note 4)
o
Tape Width
C
-
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3595
Typ.
15.4
26.4
574
149
361
0.7
23
22
94
10
81
41
80
86
4
4
1
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
4785
198
100
200
112
108
1.2
4.0
56
54
18
10
36
90
6
50
-
-
-
-
-
-
-
-
-
-
Units
V/
mΩ
μA
nC
nC
nC
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
μC
Ω
V
A
A
V
V
S
o
C