FCP36N60N Fairchild Semiconductor, FCP36N60N Datasheet

Bipolar Power 600V NChannel MOSFET SupreMOS

FCP36N60N

Manufacturer Part Number
FCP36N60N
Description
Bipolar Power 600V NChannel MOSFET SupreMOS
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCP36N60N

Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP, N-Channel
Mounting Style
Through Hole
Package / Case
TO-220
Power Dissipation
312 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FCP36N60N Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCP36N60N
N-Channel MOSFET
600V, 36A, 90mΩ
Features
• R
• Ultra low gate charge ( Typ. Qg = 86nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 81mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G
D S
GS
= 10V, I
TO-220
FCP Series
D
= 18A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
G
FCP36N60N
FCP36N60N
-55 to +150
1800
22.7
3.12
62.5
600
±30
108
100
312
300
2.6
0.4
0.5
36
12
20
S
D
SupreMOS
November 2010
www.fairchildsemi.com
Units
W/
Units
o
V/ns
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FCP36N60N Summary of contents

Page 1

... Thermal Resistance, Case to Heat Sink (Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FCP36N60N Rev. A Description = 18A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies ...

Page 2

... Reverse Recovery Charge rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 12A 25Ω, Starting T = 25° ≤ 36A, di/dt ≤ 200A/μ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCP36N60N Rev. A Package Reel Size TO-220 - unless otherwise noted C Test Conditions I = 1mA 0V ...

Page 3

... Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 5. Capacitance Characteristics FCP36N60N Rev. A Figure 2. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com ...

Page 4

... Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve FCP36N60N Rev. A (Continued) Figure 8. On-Resistance Variation vs. Temperature Figure 10. Maximum Drain Current vs. Case Temperature www.fairchildsemi.com ...

Page 5

... FCP36N60N Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCP36N60N Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCP36N60N Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCP36N60N Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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